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yexuqing木蟲之王 (文學(xué)泰斗)
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Two-dimensional indium selenide wafers for integrated electronics
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Two-dimensional indium selenide wafers for integrated electronics 二維硒化銦晶圓助力集成電子 ▲ 作者：BIAO QIN, JIANFENG JIANG, LU WANG, QUANLIN GUO, CHENXI ZHANG, LIN XU, ET AL. ▲鏈接： https://www.science.org/doi/10.1126/science.adu3803 ▲摘要： 二維（2D）硒化銦具有低有效質(zhì)量、高熱速度和優(yōu)異的電子遷移率，是一種有望超越硅電子的半導(dǎo)體，但生長薄膜尚未達到剝離微米級薄片的性能水平。 研究組報道了一種固-液-固策略，通過創(chuàng)建富銦液體界面并保持嚴(yán)格的銦硒1:1化學(xué)計量比，將非晶硒化銦薄膜轉(zhuǎn)化為純相、高結(jié)晶度的硒化銦晶圓。所得硒化銦薄膜在整個約5厘米晶圓上表現(xiàn)出優(yōu)異的均勻性、純相性和高結(jié)晶度。 基于該硒化銦晶圓制備的晶體管陣列表現(xiàn)出卓越的電子性能，超越了所有2D薄膜基器件，包括室溫下極高的遷移率（平均高達287 cm2/V s）和接近玻爾茲曼極限的亞閾值擺幅（平均低至67 mV/10倍頻）。 ▲ Abstract： Two-dimensional (2D) indium selenide, with its low effective mass, high thermal velocity, and exceptional electronic mobility, is a promising semiconductor for surpassing silicon electronics, but grown films have not achieved performance comparable with that of exfoliated micrometer-scale flakes. We report a solid?liquid?solid strategy that converts amorphous indium selenide films into pure-phase, high-crystallinity indium selenide wafers by creating an indium-rich liquid interface and maintaining a strict 1:1 stoichiometric ratio of indium to selenium. The as-obtained indium selenide films exhibit exceptional uniformity, a pure phase, and a high crystallinity across an entire ~5-centimeter wafer. Transistor arrays based on the produced indium selenide wafers demonstrate outstanding electronic performance surpassing that of all 2D film-based devices, including an extremely high mobility (averaging as high as 287 square centimeters per volt-second) and a near-Boltzmann-limit subthreshold swing (averaging as low as 67 millivolts per decade) at room temperature. |
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