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小木蟲論壇-學術科研互動平臺 » 材料區(qū) » 功能材料 » 前沿熱點 » 鐵電斜方六面體氮化硼單晶的斜邊外延
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yexuqing木蟲之王 (文學泰斗)
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[交流]
鐵電斜方六面體氮化硼單晶的斜邊外延
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鐵電斜方六面體氮化硼單晶的斜邊外延 ▲ 作者：Li Wang, Jiajie Qi, Wenya Wei, Mengqi Wu, Zhibin Zhang, Xiaomin Li, et al. ▲ 鏈接： https://www.nature.com/articles/s41586-024-07286-3 ▲ 摘要： 在二維電介質(zhì)家族中，斜方六面體氮化硼（rBN）不僅具有六方氮化硼的優(yōu)越性能（包括低介電常數(shù)和耗散、強電絕緣性、良好的化學穩(wěn)定性、高導熱性和無懸空鍵的原子平坦性），而且還具有源于面內(nèi)和面外中心對稱破缺的有用光學非線性和界面鐵電性。然而，由于需要前所未有的生長控制來協(xié)調(diào)每層的晶格取向和每個界面的滑動矢量，制備大尺寸單晶rBN層仍頗具挑戰(zhàn)。 研究組報道了一種使用斜邊外延來制備厘米尺寸單晶rBN層的簡單方法，在相鄰鎳表面上具有精確的層間ABC堆疊。結(jié)果在斜面（110）處成功地精確制造了階地面（100）聚束臺階邊緣的單晶鎳基底，同時引導每個BN層中一致的硼-氮鍵取向，并通過每個斜面附近的成核來引導BN層的斜方六面體堆疊。 研究組驗證了原生BN層的純斜方六面體相，并在高居里溫度下表現(xiàn)出穩(wěn)健、均勻和可切換的鐵電性。該工作為單晶二維層的精確堆疊控制生長提供了有效途徑，并為基于堆疊二維材料的適用多功能器件奠定了基礎。 ▲ Abstract： Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride—including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds—but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry. However, the preparation of large-sized single-crystal rBN layers remains a challenge, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron–nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials. |
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