| 4 | 1/1 | 返回列表 |
| 查看: 949 | 回復(fù): 3 | |||
| 【懸賞金幣】回答本帖問題,作者二狗子的將贈(zèng)送您 5 個(gè)金幣 | |||
二狗子的新蟲 (小有名氣)
|
[求助]
關(guān)于單層二硫化鉬如何做納米管結(jié)構(gòu)? 已有1人參與
|
||
|
求助。! 我準(zhǔn)備做二硫化鉬材料的納米管體系,之前用MS 建的模型的角度是90,90,120,不是正交的,我看有的資料是可以做出來(lái)納米管的結(jié)構(gòu),想問一下是怎么做出來(lái)的,謝謝! |
木蟲 (正式寫手)
|
https://tigerprints.clemson.edu/all_dissertations/116 Recommended Citation Xu, Lingyun, "Electronic Structure of MoS2 Nanotubes" (2007). All Dissertations. 116. https://tigerprints.clemson.edu/all_dissertations/116 Abstract First-principles methods enable one to study the electronic structure of solids, surfaces, or clusters as accurately as possible with moderate computational effort. So we used a first-principles electronic structure method to calculate the electronic structure of free-standing layer of MoS2 with ABA and ABC stacking. Our results suggest MoS2 with ABA stacking which appears as an insulator has an energy gap of 1.64 eV. The covalent bonds between molybdenum and sulfur atoms are strong enough to form this gap. The ABC stacking will break the symmetry and becomes metallic. The valance and impurities calculations show the rigid-band picture of MoS2 with ABA stacking. For treating larger systems, one can also use the tight-binding method. We applied this method to fit the band structure of single layer of S to the result from the first-principles calculation. The electronic structure of MoS2 nanotubes has been studied using a first-principles electronic structure method. We investigated MoS2 zigzag (n, 0) nanotubes as well as armchair (n, n) structures. We constructed MoS2 nanotubes with ABA and ABC stacking. The structures have been completely optimized. We compare our results to previous tight-binding calculations by Seifert et al.[29] and find significant differences in configuration, bond lengths, and resulting electronic structure in several MoS2 nanotubes. For zigzag structures, almost all the nanotubes with ABA stacking and small tubes with ABC stacking are semiconducting. For armchair structures, all (n, n) tubes with ABA stacking are semiconducting and with ABC stacking are metallic. For armchair and zigzag tubes of a given n, the lowest energy structure is semiconducting. If you cannot download it, please shot me an email |
木蟲 (正式寫手)
版主 (知名作家)
認(rèn)真做事,踏實(shí)做人

| 4 | 1/1 | 返回列表 |
| 最具人氣熱帖推薦 [查看全部] | 作者 | 回/看 | 最后發(fā)表 | |
|---|---|---|---|---|
|
[考博] 申博 +3 | 添菜了哈 2026-03-04 | 5/250 |
|
|---|---|---|---|---|
|
[考研] 材料類考研調(diào)劑 +7 | gemmgemm 2026-03-01 | 8/400 |
|
|
[考研] 一志愿天津大學(xué)085600 319分 材料與化工 金屬方向 求調(diào)劑 +6 | 青科11 2026-03-02 | 6/300 |
|
|
[考研] 0817化學(xué)工程與技術(shù)312分求調(diào)劑 +3 | T123 tt 2026-03-04 | 3/150 |
|
|
[考研] 求調(diào)劑院校 +6 | 云朵452 2026-03-02 | 12/600 |
|
|
[基金申請(qǐng)] 沒有青基直接申請(qǐng)面上,感覺自己瘋了 +6 | kevin63t 2026-03-02 | 12/600 |
|
|
[考研] 282求調(diào)劑 +5 | 2103240126 2026-03-02 | 8/400 |
|
|
[考研] 本科太原理工采礦工程,求調(diào)劑 +3 | onlx 2026-03-01 | 3/150 |
|
|
[考研] 一志愿西交大材料學(xué)碩 346 求調(diào)劑 +3 | zju51 2026-03-04 | 3/150 |
|
|
[考博] 26申博 +5 | north, 2026-02-28 | 5/250 |
|
|
[考研] 264求調(diào)劑 +3 | thext 2026-03-03 | 3/150 |
|
|
[考研] 一志愿華中科技大學(xué),化學(xué)專業(yè)344分,求調(diào)劑 +6 | 邢xing1 2026-03-02 | 6/300 |
|
|
[考研] 一志愿中科大能動(dòng)297求調(diào)劑,本科川大 +3 | 邵11 2026-03-03 | 3/150 |
|
|
[考研] 278求調(diào)劑 +3 | 滿天星11_22 2026-03-02 | 3/150 |
|
|
[考研] 298求調(diào)劑 +10 | 人間唯你是清歡 2026-02-28 | 14/700 |
|
|
[考研] 求調(diào)劑 +7 | repeatt?t 2026-02-28 | 7/350 |
|
|
[考博] 誠(chéng)招農(nóng)業(yè)博士 +3 | 心欣向榮 2026-02-28 | 3/150 |
|
|
[考研] 材料學(xué)調(diào)劑 +10 | 提神豆沙包 2026-02-28 | 12/600 |
|
|
[考研] 291分工科求調(diào)劑 +9 | science餓餓 2026-03-01 | 10/500 |
|
|
[考研] 311求調(diào)劑 +9 | 南迦720 2026-02-28 | 10/500 |
|