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連續(xù)動態(tài)再結(jié)晶與層錯能的關(guān)系
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請教大家,一般說層錯能低的材料在動態(tài)再結(jié)晶過程中趨于非連續(xù)動態(tài)再結(jié)晶,而層錯能高的材料趨于連續(xù)動態(tài)再結(jié)晶,這里面的機理是什么呢? 層錯能高易于交滑移,不易產(chǎn)生晶界遷移,但是為什么趨于連續(xù)而非不連續(xù)動態(tài)再結(jié)晶的原理還是不太明白。 |
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A review of dynamic recrystallization phenomena in metallic materials 2.2.1. Stacking fault energy In summary, the SFE determines the width of stacking fault which influences the level of dislocations dissociation into partial dislocations. Low γSFE promotes such a dissociation reactionwhich hinders the climb and cross slip of dislocations, i.e., retards DRV. This explains why CDRX and GDRX are generally observed for high γSFE while DDRX is expected for materials with low γSFE. It should be emphasized that γSFE is not the only factor to determine which type of DRX processes will take place during hot deformation, other influencing factors, which also play important roles in DRX, will be discussed in the following sections. |
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個人認為層錯能不是直接影像因素,而是變形結(jié)構(gòu)的非均勻性導致了不均勻形核的再結(jié)晶。而大變形量下的非均勻變形組織多為低層錯能所導致。 發(fā)自小木蟲IOS客戶端 |
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